Light-induced properties of ruthenium-doped Bi4Ge3O12 crystals -: art. no. 113527

The influence of ruthenium addition at different doping concentrations on the optical properties and holographic behavior of Bi4Ge3O12 crystals is investigated. Doped Bi4Ge3O12 single crystals are grown by using the Czochralski technique. The distribution coefficient of each crystal is measured to determine the concentration of a doped ruthenium element. Holographic experiments are performed. Ruthenium is found to make Bi4Ge3O12 sensitive in the red spectral range. Thermal annealing and ultraviolet exposure have been used to modify the defect structure and corresponding absorption band of each crystal such that the holographic recording has been influenced. The diffraction efficiency increases with increasing of ruthenium content, especially after irradiation by ultraviolet light. (c) 2005 American Institute of Physics.