Metal-Oxide RRAM

被引：2189

作者：

Wong, H. -S. Philip ^{[1
]}

Lee, Heng-Yuan ^{[2
]}

Yu, Shimeng ^{[1
]}

Chen, Yu-Sheng ^{[2
,3
]}

Wu, Yi ^{[1
]}

Chen, Pang-Shiu ^{[2
,4
]}

Lee, Byoungil ^{[1
]}

Chen, Frederick T. ^{[2
]}

Tsai, Ming-Jinn ^{[2
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] ITRI, Elect & Optoelect Res Labs, Nanoelect Technol Div, Hsinchu 31040, Taiwan

[3] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan

[4] Ming Hsin Univ Sci & Technol, Dept Chem & Mat Engn, Hsinchu 30401, Taiwan

来源：

PROCEEDINGS OF THE IEEE | 2012年 / 100卷 / 06期

基金：

美国国家科学基金会;

关键词：

Emerging memory; metal oxide; multibit memory; nonvolatile memory; OxRAM; ReRAM; resistance change memory; resistive switching memory; resistive switching random access memory (RRAM); solid-state memory; RESISTIVE SWITCHING BEHAVIORS; TIO2; THIN-FILMS; THERMAL DISSOLUTION MODEL; ATOMIC-LAYER DEPOSITION; NONVOLATILE MEMORY; HIGH-SPEED; HIGH-DENSITY; NEGATIVE-RESISTANCE; DOPED SRTIO3; LOW-POWER;

D O I：

10.1109/JPROC.2012.2190369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

引用

页码：1951 / 1970

页数：20

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