Facile Synthesis, Characterization, Nanocrystal Growth and Photoluminescence Properties of GeS Nanowires

As a IV-VI semiconductor, GeS is winning wide attention for its excellent properties. However, few examples of GeS nanostructures, especially those with photoluminescence (PL) properties, have been reported. After the optimization of reaction conditions, including time and temperature, the GeS nanowires with PL properties are synthesized via a green, facile hydrothermal route without using any toxic reagent. These materials are characterized by transmission and scanning electron microscopy (TEM and SEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), etc. With the average diameter of similar to 200 nm and the length ranging from 1-25 mu m, the resulting GeS nanowires have relatively smooth surface and round top, and are oriented along [100] facet. The growth mechanism of GeS nanowires is investigated, and the understanding of their growth mechanism could provide helpful guidance for designing experimental conditions rationally to synthesize nanowires. Due to their special nanostructure, these nanowires possess very good fluorescent properties, which indicates that these nanowires have potential to apply in future optical nanodevices.