Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals

被引：0

作者：

Samanta, SK ^{[1
]}

Singh, PK ^{[1
]}

Yoo, WJ ^{[1
]}

Samudra, G ^{[1
]}

Yeo, YC ^{[1
]}

Bera, LK ^{[1
]}

Balasubramanian, N ^{[1
]}

机构：

[1] Natl Univ Singapore, Silicon Nano Device Lab, Dept Elect & Comp Eng, Singapore 119260, Singapore

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper for the first time, reports the memory enhancement characteristics and good retention with feasibility of two-bit operation of small scale devices with gate length down to 100 nm, using double layer W nanocrystals embedded in HfAlO for the next generation memory application. Double layer device shows increasing memory window with scaling which will be extremely beneficial.

引用

页码：177 / 180

页数：4

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