Using Operating Point-Dependent Degradation and gm/ID Method for Aging-Aware Design

被引:0
|
作者
Hellwege, Nico [1 ]
Heidmann, Nils [1 ]
Peters-Drolshagen, Dagmar [1 ]
Paul, Steffen [1 ]
机构
[1] Univ Bremen, Inst Electrodynam & Microelect ITEM Me, D-28359 Bremen, Germany
关键词
Reliability; Degradation; NBTI; HCI; Aging; EKV; Analog;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Effects like NBTI and HCI are degrading the characteristics of analog circuits. Available countermeasures to maintain system performances often include the use of optimizers or other external tools to size devices appropriately, which give no insight in relations between degradation and circuit parameters for the designer. This paper proposes an extension of the g(m)/I-D sizing method by considering aged transistor parameters for fresh circuit design. A possible usage scenario for this investigation is given by optimizing a simple circuit towards higher reliability. The degradation in amplification of a common source amplifier is reduced by 19% for a full time operation of 10 years.
引用
收藏
页码:113 / 116
页数:4
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