Plasma Enhanced Atomic Layer Deposited Ruthenium for MIMCAP Applications

被引：13

作者：

Swerts, J. ^{[1
]}

Salimullah, M. M. ^{[1
]}

Popovici, M. ^{[1
]}

Kim, M. -S. ^{[1
]}

Pawlak, M. A. ^{[1
]}

Delabie, A. ^{[1
]}

Schaekers, M. ^{[1
]}

Tomida, K. ^{[1
]}

Kaczer, B. ^{[1
]}

Opsomer, K. ^{[1
]}

Vrancken, C. ^{[1
]}

Debusschere, I. ^{[1
]}

Altimime, L. ^{[1
]}

Kittl, J. A. ^{[1
]}

Van Elshocht, S. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 7 | 2011年 / 41卷 / 02期

关键词：

THIN-FILMS; GROWTH; RU;

D O I：

10.1149/1.3633653

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A comparative study of the growth behavior of nm-thin ruthenium layers by plasma enhanced atomic layer deposition using two ruthenium precursors is discussed. For bis(ethylcyclopentadienyl)ruthenium or Ru(EtCp)(2), we have found a large incubation time on titanium nitride when using N-2/NH3 plasma. With N-2/H-2 plasma the incubation was significantly reduced. For (methylcyclopentadienyl-pyrrolyl) ruthenium or MCPRu, no incubation was observed for either plasmas. The measured growth per cycle was similar to 0.02 nm for Ru(EtCp)(2) whereas similar to 0.04 nm for MCPRu. The top surface of the PE-ALD Ru films can be oxidized without surface roughening by applying a low pressure O-2 anneal, while O-3 exposure leads to roughening due to etching and re-deposition downstream of etched Ru. Awareness of the impact of oxidizing ambients on Ru is essential for successful integration of Ru layers as electrode in metal-insulator-metal capacitors.

引用

页码：41 / 51

页数：11

共 50 条

[1] Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
Swerts, J.
Armini, S.
Carbonell, L.
Delabie, A.
Franquet, A.
Mertens, S.
Popovici, M.
Schaekers, M.
Witters, T.
Tokei, Z.
Beyer, G.
Van Elshocht, S.
Gravey, V.
Cockburn, A.
Shah, K.
Aubuchon, J.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (01):
[2] Atomic Layer Deposition of Ru and RuO2 for MIMCAP Applications
Zhao, C.
Pawlak, M. A.
Popovici, M.
Schaekers, M.
Sleeckx, E.
Vancoille, E.
Wouters, D. J.
Tokei, Zs.
Kittl, J. A.
ATOMIC LAYER DEPOSITION APPLICATIONS 5, 2009, 25 (04): : 377 - 387
[3] Texture of atomic layer deposited ruthenium
Musschoot, J.
Xie, Q.
Deduytsche, D.
De Keyser, K.
Longrie, D.
Haemers, J.
Van den Berghe, S.
Van Meirhaeghe, R. L.
D'Haen, J.
Detavernier, C.
MICROELECTRONIC ENGINEERING, 2010, 87 (10) : 1879 - 1883
[4] Impact of the Plasma Ambient and the Ruthenium Precursor on the Growth of Ruthenium Films by Plasma Enhanced Atomic Layer Deposition
Swerts, J.
Delabie, A.
Salimullah, M. M.
Popovici, M.
Kim, M. -S.
Schaekers, M.
Van Elshocht, S.
ECS SOLID STATE LETTERS, 2012, 1 (02) : P19 - P21
[5] Plasma-enhanced atomic layer deposition of ruthenium thin films
Kwon, OK
Kwon, SH
Park, HS
Kang, SW
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (04) : C46 - C48
[6] Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
Cao, Duo
Cheng, Xinhong
Jia, Tingting
Zheng, Li
Xu, Dawei
Wang, Zhongjian
Xia, Chao
Yu, Yuehui
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 307 : 463 - 467
[7] Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications
Dey, Sonal
Yu, Kai-Hung
Consiglio, Steven
Tapily, Kandabara
Hakamata, Takahiro
Wajda, Cory S.
Leusink, Gert J.
Jordan-Sweet, Jean
Lavoie, Christian
Muir, David
Moreno, Beatriz
Diebold, Alain C.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (03):
[8] Characteristics and applications of plasma enhanced-atomic layer deposition
Kim, Hyungjun
THIN SOLID FILMS, 2011, 519 (20) : 6639 - 6644
[9] Optoelectronic properties of CuO deposited by plasma-enhanced atomic layer deposition
Haggren, Anne
Bartholazzi, Gabriel
Watson, Lachlan
Macdonald, Daniel
Catchpole, Kylie
Black, Lachlan
VACUUM, 2025, 234
[10] Impact of plasma power on plasma enhanced atomic layer deposited TiO2 as a spacer
Yoon, Hee jun
Jeon, Hyeongtag
THIN SOLID FILMS, 2024, 807

← 1 2 3 4 5 →