Surface states and electronic structure of polar and nonpolar InN - An in situ photoelectron spectroscopy study

被引：22
|
作者：
Eisenhardt, A. [1 ]
Krischok, S.
Himmerlich, M.
机构：
[1] Tech Univ Ilmenau, Inst Phys, D-98694 Ilmenau, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 23期
关键词：
FILMS; X-2; GAN;
D O I：
10.1063/1.4810074
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Valence band structure and surface states of InN with (0001), (000-1), (1-100), and (11-20) orientation were investigated in situ after growth using photoelectron spectroscopy. Depending on surface orientation, different occupied surface states are identified and differentiated from bulk contributions. For N-polar, m-plane, and a-plane InN, the surface states are located at the valence band maximum, while In-polar InN features surface states close to the Fermi level. The surface band alignment correlates with the position of surface states. For InN(0001), a much larger surface downward band bending is observed compared to N-polar, m-plane, and a-plane InN, where almost flat band conditions occur. (C) 2013 AIP Publishing LLC.
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页数：4
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