共 3 条
A triple-node upset self-healing latch for high speed and robust operation in radiation-prone harsh-environment
被引:13
|作者:
Kumar, Sandeep
[1
]
Mukherjee, Atin
[1
]
机构:
[1] Natl Inst Technol Rourkela, Dept Elect & Commun Engn, Rourkela, Odisha, India
关键词:
RHBD latch;
Triple node upset;
Robustness;
Soft error;
Self-healing;
TOLERANT LATCH;
LOW-POWER;
SINGLE EVENT;
MEMORY CELL;
DESIGN;
D O I:
10.1016/j.microrel.2022.114857
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
With continuous advancement in technology, latches have become highly susceptible to radiation induced soft -errors such as multi-node-upsets (MNU). To effectively resilient the MNUs, this work presents a triple-node-upset (TNU) self-healing (TNUSH) latch, which performs robust operation in harsh radiation environment. The TNUSH latch mainly employs Muller C-elements and is segmented as storage cells, feedback interceptors, and the healer, forming multi-feedback interlocked loops to retain the original data after a radiation event. The self-healing capability of the proposed latch is successfully validated by the fault-injection simulation using Synopsys HSPICE. Simulation results show that the proposed latch offers highest speed of operation and has the lowest cost in terms of the power-delay-area-product (PDAP) among the existing TNU resilient latches. The proposed latch saves up to 26.64 % power and 18.47 % area compared to TNU resilient TNURL, and 92.21 % time and 88.33 % PDAP compared to the TNUTL, which is not resilient to TNU. Robustness of the proposed latch against process, voltage, and temperature variation is further assessed by Monte-Carlo simulations.
引用
收藏
页数:12
相关论文