Enhanced ultraviolet responses in thin-film InGaP solar cells by down-shifting

被引:24
|
作者
Sheng, Xing [1 ]
Corcoran, Christopher J. [2 ]
He, Junwen [2 ]
Shen, Ling [1 ,3 ]
Kim, Seungho [4 ]
Park, Jongwook [4 ]
Nuzzo, Ralph G. [1 ,2 ]
Rogers, John A. [1 ,2 ]
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
[3] Shanghai Univ, Dept Phys, SHU SolarE R&D Lab, Shanghai 200444, Peoples R China
[4] Catholic Univ Korea, Dept Chem, Puchon 420743, Kyunggi, South Korea
基金
新加坡国家研究基金会;
关键词
EFFICIENCY; LIMIT; PHOTOVOLTAICS; LUMINESCENCE; PERFORMANCE;
D O I
10.1039/c3cp54096k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Layers of poly(methyl methacrylate) doped with the Eu complex Eu(DPEPO)(hfac)(3) (EuDH) provide a means for down-shifting incident ultraviolet (UV) light into the visible range, with beneficial effects on the performance of solar cells, as demonstrated with thin-film InGaP devices formed by epitaxial liftoff. Experimental and computational results establish important aspects of gain and loss mechanisms in the UV range. Measurements show that InGaP cells with coatings of EuDH doped PMMA exhibit enhanced currents (8.68 mA cm(-2)) and power conversion efficiencies (9.48%), both due to increased responses at wavelengths between 300-360 nm.
引用
收藏
页码:20434 / 20437
页数:4
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