Growth and Annealing of ZnO Films Grown by Spray Pyrolysis

被引：8

作者：

Yoshino, Kenji ^{[1
]}

Oyama, Satoshi ^{[1
]}

Oshima, Minoru ^{[1
]}

Ikari, Tetsuo ^{[1
]}

Yoneta, Minoru ^{[2
]}

机构：

[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

[2] Okayama Univ Sci, Dept Appl Phys, Okayama 7000005, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 10期

关键词：

semiconductor; ZnO; transparent conductive oxide (TCO); XRD; AFM; Hall; photoluminescence (PL);

D O I：

10.1143/JJAP.47.8170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Undoped and In-doped ZnO films on glass substrate were successfully grown by spray pyrolysis at 500 degrees C. The samples were annealed under N-2 atmosphere between 100 and 600 degrees C for 5 min. The lattice constants and grain sizes of both samples were unchanged with increasing annealing temperature. However, the photoluminescence intensity of the In-doped sample markedly decreased in comparison with that of the undoped sample with increasing annealing temperature. The carrier concentration increased with increasing annealing temperature. These findings indicated that the number of nonradiative recombination centers of the In-doped ZnO samples markedly increased. [DOI: 10.1143/JJAP.47.8170]

引用

页码：8170 / 8173

页数：4

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