A study of Co/Cu multilayer growth on Si(111) with silicide buffer layers

被引：7
|
作者：
Emmerson, CM [1 ]
Shen, TH [1 ]
机构：
[1] UNIV LEEDS,DEPT PHYS,LEEDS LS2 9JT,W YORKSHIRE,ENGLAND
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1996年 / 156卷 / 1-3期
关键词：
D O I：
10.1016/0304-8853(95)00767-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The growth of Co/Cu multilayers on Si(111) substrates has been studied with metal silicides as the initial buffer layers. Epitaxial growth has been observed on both Co- and Cu-silicides. The values of the magnetoresistance of the epitaxial layers were found to be higher for samples grown on Cu-silicides than for those on Co-silicides.
引用
收藏
页码：15 / 16
页数：2
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