High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications

被引:56
|
作者
Wang, K. [1 ,2 ,3 ]
Liu, Yanwen [1 ,2 ]
Wang, Weiyi [1 ,2 ]
Meyer, N. [3 ]
Bao, L. H. [1 ,2 ,3 ]
He, L. [4 ]
Lang, M. R. [4 ]
Chen, Z. G. [5 ]
Che, X. Y. [3 ]
Post, K. [6 ]
Zou, J. [5 ,7 ]
Basov, D. N. [6 ]
Wang, K. L. [4 ]
Xiu, Faxian [1 ,2 ]
机构
[1] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[3] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA
[4] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA
[5] Univ Queensland, Brisbane, Qld 4072, Australia
[6] Univ Calif San Diego, Dept Phys, San Diego, CA 92093 USA
[7] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia
基金
美国国家科学基金会;
关键词
DER-WAALS EPITAXY; QUANTUM OSCILLATIONS; NANOWIRE ARRAYS; SURFACE-STATES;
D O I
10.1063/1.4813903
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report high-quality topological insulator Bi2Te3 thin films grown on muscovite mica substrates by molecular beam epitaxy. The topographic and structural analysis revealed that the Bi2Te3 thin films exhibited atomically smooth terraces over a large area and a high crystalline quality. Both weak antilocalization effect and quantum oscillations were observed in the magnetotransport of the relatively thin samples. A phase coherence length of 277 nm for a 6 nm thin film and a high surface mobility of 0.58 m(2) V-1 s(-1) for a 4 nm thin film were achieved. These results confirm that the thin films grown on mica are of high quality. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:4
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