Continuous-wave two-photon absorption in a Watt-class semiconductor optical amplifier

被引：23

作者：

Juodawlkis, Paul W. ^{[1
]}

Plant, Jason J. ^{[1
]}

Donnelly, Joseph P. ^{[1
]}

Motamedi, Ali ^{[2
]}

Ippen, Erich P. ^{[2
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

[2] MIT, Elect Res Lab, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 16期

关键词：

D O I：

10.1364/OE.16.012387

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the observation of photoluminescence produced by the recombination of free carriers generated via continuous-wave (CW) two-photon absorption (TPA) in a packaged, low-confinement (Gamma similar to 0.5%) InGaAsP/InP quantum-well slab-coupled optical waveguide amplifier (SCOWA) having a saturation output power of 0.8 W and 1/e-mode-field diameters of 5 x 7 mu m. Photoluminescence power measured at the wavelength corresponding to the bandgap wavelength of the SCOWA's InGaAsP waveguide (lambda(G) similar to 1040 nm) exhibits a quadratic dependence on the amplifier's 1540-nm output power. Comparison between measured and simulated CW gain saturation data reveals that the combination of TPA and TPA-generated free-carrier absorption (FCA) limits the CW output intensity of high-power, low-confinement semiconductor optical amplifiers and semiconductor lasers. (C) 2008 Optical Society of America.

引用

页码：12387 / 12396

页数：10

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