Transition temperature of ferromagnetic semiconductors: A dynamical mean field study

被引：151
|
作者：
Chattopadhyay, A
Das Sarma, S
Millis, AJ
机构：
[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
[2] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
[3] Rutgers State Univ, Dept Phys & Astron, Ctr Mat Theory, Piscataway, NJ 08854 USA
来源：
PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.87.227202
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We formulate a theory of doped magnetic semiconductors such as Ga1-xMnxAs which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature T-c as a function of magnetic coupling strength J, carrier density n. and Mn density x. We find that T-c is determined by a subtle interplay between carrier density and magnetic coupling.
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页码：227202 / 227202
页数：4
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