Hall effect measurements on InAs nanowires

被引：81

作者：

Bloemers, Ch. ^{[1
,2
]}

Grap, T. ^{[1
,2
]}

Lepsa, M. I. ^{[1
,2
]}

Moers, J. ^{[1
,2
]}

Trellenkamp, St. ^{[2
,3
]}

Gruetzmacher, D. ^{[1
,2
]}

Lueth, H. ^{[1
,2
]}

Schaepers, Th. ^{[1
,2
,4
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany

[2] Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany

[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 8, D-52425 Julich, Germany

[4] Rhein Westfal TH Aachen, Inst Phys 2, D-52056 Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 15期

关键词：

SURFACES;

D O I：

10.1063/1.4759124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759124]

引用

页数：4

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