Computational quantum magnetism: Role of noncollinear magnetism

被引:5
|
作者
Freeman, Arthur J. [1 ]
Nakamura, Kohji [2 ]
机构
[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[2] Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan
基金
美国国家科学基金会;
关键词
Domain wall; Noncolliner magnetism; Magnetic vortex; ELECTRONIC-STRUCTURE; HALF-METALLICITY; EXCHANGE BIAS; INTERFACES; SURFACES; ANISOTROPY;
D O I
10.1016/j.jmmm.2008.11.107
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We are witnessing today a golden age of innovation with novel magnetic materials and with discoveries important for both basic science and device applications. Computation and simulation have played a key role in the dramatic advances of the past and those we are witnessing today. A goal-driving computational science-simulations of every-increasing complexity of more and more realistic models has been brought into greater focus with greater computing power to run sophisticated and powerful software codes like our highly precise full-potential linearized augmented plane wave (FLAPW) method. Indeed, significant progress has been achieved from advanced first-principles FLAPW calculations for the predictions of surface/interface magnetism. One recently resolved challenging issue is the role of noncollinear magnetism (NCM) that arises not only through the SOC, but also from the breaking of symmetry at surfaces and interfaces. For this, we will further review some specific advances we are witnessing today, including complex magnetic phenomena from noncollinear magnetism with no shape approximation for the magnetization (perpendicular MCA in transition-metal overlayers and superlattices; unidirectional anisotropy and exchange bias in FM and AFM bilayers; constricted domain walls important in quantum spin interfaces; and curling magnetic nano-scale dots as new candidates for nonvolatile memory applications) and most recently providing new predictions and understanding of magnetism in novel materials such as magnetic semiconductors and multi-ferroic systems. (C) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码:894 / 898
页数:5
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