Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells

被引：14

作者：

Bennett, Mitchell F. ^{[1
]}

Bittner, Zachary S. ^{[1
]}

Forbes, David V. ^{[1
]}

Tatavarti, Sudersena Rao ^{[2
]}

Ahrenkiel, S. Phillip ^{[3
]}

Wibowo, Andree ^{[2
]}

Pan, Noren ^{[2
]}

Chern, Kevin ^{[2
]}

Hubbard, Seth M. ^{[1
]}

机构：

[1] Rochester Inst Technol, Rochester, NY 14623 USA

[2] MicroLink Devices Inc, Niles, IL 60714 USA

[3] South Dakota Sch Mines & Technol, Rapid City, SD 57701 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 21期

基金：

美国国家科学基金会;

关键词：

EFFICIENCY;

D O I：

10.1063/1.4833776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs/GaAs strain-balanced quantum dot (QD) n-i-p solar cells were fabricated by epitaxial lift-off (ELO), creating thin and flexible devices that exhibit an enhanced sub-GaAs bandgap current collection extending into the near infrared. Materials and optical analysis indicates that QD quality after ELO processing is preserved, which is supported by transmission electron microscopy images of the QD superlattice post-ELO. Spectral responsivity measurements depict a broadband resonant cavity enhancement past the GaAs bandedge, which is due to the thinning of the device. Integrated external quantum efficiency shows a QD contribution to the short circuit current density of 0.23 mA/cm(2). (C) 2013 AIP Publishing LLC.

引用

页数：4

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