High-Sn fraction GeSn quantum dots for Si-based light source at 1.55 μm

被引：15

作者：

Zhang, Lu ^{[1
]}

Hong, Haiyang ^{[1
]}

Li, Cheng ^{[1
]}

Chen, Songyan ^{[1
]}

Huang, Wei ^{[1
]}

Wang, Jianyuan ^{[1
]}

Wang, Hao ^{[2
]}

机构：

[1] Xiamen Univ, Jiujiang Res Inst, Dept Phys, Semicond Photon Res Ctr,OSED, Xiamen 361005, Fujian, Peoples R China

[2] Xiamen Univ, Dept Phys, Res Inst Soft Matter & Biomimet, Xiamen 361005, Fujian, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 05期

基金：

中国国家自然科学基金;

关键词：

ALLOY NANOCRYSTALS; GERMANIUM; GROWTH; GE1-XSNX; FILMS;

D O I：

10.7567/1882-0786/ab0993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The preparation of GeSn quantum dots (QDs) facilitates the solution of Si-based light source for communication. The GeSn QDs with a uniform size of 5 nm embedded in amorphous GeSn were synthesized by low temperature annealing on amorphous GeSn strips intersected with Sn strips. The Sn fraction in GeSn QDs is much higher than that in original amorphous GeSn matrix. A novel growth mechanism related to Sn diffusion induced nucleation and the strain limitation effect was proposed. The direct bandgap of similar to 0.8 eV extracted from room-temperature photoluminescence and absorption spectra is larger than the theoretical prediction of 0.41 eV in bulk GeSn with Sn fraction of 13.6%. (C) 2019 The Japan Society of Applied Physics

引用

页数：5

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