Picosecond carrier lifetime and large optical nonlinearities in InGaAsP grown by He-plasma-assisted molecular beam epitaxy

被引：13
|
作者：
Qian, L
Benjamin, SD
Smith, PWE
Robinson, BJ
Thompson, DA
机构：
[1] UNIV TORONTO,ONTARIO LASER & LIGHTWAVE RES CTR,TORONTO,ON M5S 3G4,CANADA
[2] MCMASTER UNIV,CTR ELECTROPHOTON MAT & DEVICES,HAMILTON,ON L8S 4L7,CANADA
来源：
OPTICS LETTERS | 1997年 / 22卷 / 02期
关键词：
D O I：
10.1364/OL.22.000108
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report the measurement of a fast carrier lifetime and large band-gap-resonant optical nonlinearities in an InGaAsP sample grown by He-plasma-assisted molecular beam epitaxy. Using a 2-mu m-thick sample grown on an InP substrate, we observed a carrier lifetime of 15 ps and an index change as large as 0.077 induced by an intense l-ps pulse at a wavelength of 1.57 mu m. Good crystalline structure is maintained in the material during growth, and the absorption spectrum shows a sharp band edge. These properties indicate that materials produced by He-plasma-assisted growth have potential applications in compact ultrafast photonic devices. (C) 1997 Optical Society of America
引用
收藏
页码：108 / 110
页数：3
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