Estimate of the Nonradiative Carrier Lifetime in InGaN/GaN Quantum Well Structures by Using Time-resolved Photoluminescence

被引：3
|
作者：
Kim, Hyunsung [1 ]
Han, Dong-Pyo [1 ]
Oh, Ji-Yeon [1 ]
Shim, Jong-In [1 ]
Shin, Dong-Soo [2 ]
Ryu, Han-Youl [3 ]
机构：
[1] Hanyang Univ, Dept Elect & Commun Engn, Ansan 425791, South Korea
[2] Hanyang Univ, Dept Appl Phys, Ansan 425791, South Korea
[3] Inha Univ, Dept Phys, Inchon 402751, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2012年 / 60卷 / 11期
关键词：
Quantum wells; Light-emitting diodes; Carrier lifetime; Time-resolved photoluminescence; RECOMBINATION DYNAMICS; LOCALIZED EXCITONS; GAN; EMISSION; SINGLE;
D O I：
10.3938/jkps.60.1934
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The nonradiative recombination carrier lifetime in InGaN/GaN quantum wells was measured utilizing a time-resolved photoluminescence measurement. The lifetime was estimated from the final decay stage of the temporal response of the photoluminescence, which is closely related to the nonradiative recombination. The nonradiative recombination carrier lifetime estimated by using the given method showed of relative independence from the carrier density in the quantum well. A study comparing the nonradiative recombination carrier lifetime estimated by using the given method with the results of temperature-dependent photoluminescence and current-dependent electroluminescence measurements at room temperature we performed. This unique method can be very useful for measuring the nonradiative carrier lifetime with good accuracy within a short time.
引用
收藏
页码：1934 / 1938
页数：5
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