Integration of high dielectric (Ba1-xSrx)TiO3 thin films into new barrier layer electrode structures

被引：5
|
作者：
Lee, JC [1 ]
Choi, ES
Yoon, SG
Yoon, DS
Baik, HK
机构：
[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea
[2] Yonsei Univ, Dept Met Engn, Seoul 120749, South Korea
[3] Hanyang Univ, Ceram Proc Res Ctr, Seoul 133791, South Korea
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 08期
关键词：
D O I：
10.1149/1.1392437
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
(Ba1-xSrx)TiO3 (BST) films were deposited on the new electrode structures of Pt/RuO2 + Ta/TiSi2/poly-Si/SiO2/Si (PRTS) and Pt/RuO2 + Ta/poly-Si/SiO2/Si (PRS) by metallorganic chemical vapor deposition. The films deposited on PRTS show smoother morphologies than those on PRS. Titanium-silicide (TiSi2) buffer layers formed on poly-Si play an important role in decreasing the roughness of each layer as well as contact resistance between RuO2 + Ta and poly-Si. The electrode structures showed a stable morphology after deposition of BST films and annealing at 750 degrees C. The 80 nm thick BST films deposited on PRTS showed a dielec tric constant of 240 and dissipation factor of 0.01 at 100 kHz. The BST films deposited on PRTS have a leakage current density of about 4.0 X 10(-7) A/cm(2) at 190 kV/cm and breakdown strength of 290 kV/cm. (C) 1999 The Electrochemical Society. S0013-4651(98)12-061-X. All rights reserved.
引用
收藏
页码：3101 / 3104
页数：4
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