Magnetized plasma sheaths in an oblique magnetic field were extensively investigated by conventionally assuming Boltzmann relation for electron density. This article presents the study of the magnetized sheath without using the Boltzmann relation but by considering the electron reflection along the magnetic field lines caused by the negative sheath potential. A generalized Bohm criterion is analytically derived, and sheath profiles are numerically obtained, which are compared with the results of the conventional model. The results show that the ion Mach number at the sheath edge normal to the wall has a strong dependence on the wall potential, which differs significantly from the conventional model in which the Mach number is independent of the wall potential. The floating wall potential is lower in the present model than that in the conventional model. Furthermore, the sheath profiles are appreciably narrower in the present model when the wall bias is low, but approach the result of the conventional model when the wall bias is high. The sheath thickness decreases with the increase of ion-to-electron temperature ratio and magnetic field strength but has a complex relationship with the angle of the magnetic field. (C) 2015 AIP Publishing LLC.
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Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Anhui, Peoples R China
Univ Sci & Technol China, CAS Key Lab Geospace Environm, Hefei 230026, Anhui, Peoples R ChinaUniv Sci & Technol China, Dept Modern Phys, Hefei 230026, Anhui, Peoples R China
Wang, Ting-Ting
Li, Jing-Ju
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Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Anhui, Peoples R China
China Univ Min & Technol, Coll Sci, Xuzhou 221116, Jiangsu, Peoples R ChinaUniv Sci & Technol China, Dept Modern Phys, Hefei 230026, Anhui, Peoples R China
Li, Jing-Ju
Ma, J. X.
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Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Anhui, Peoples R China
Univ Sci & Technol China, CAS Key Lab Geospace Environm, Hefei 230026, Anhui, Peoples R ChinaUniv Sci & Technol China, Dept Modern Phys, Hefei 230026, Anhui, Peoples R China
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Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R ChinaDalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R China
Liu, Jin-Yuan
Zhao, Fei
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Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R ChinaDalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R China
Zhao, Fei
Zou, Xiu
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Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R ChinaDalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R China
Zou, Xiu
Zhang, Yu
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Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R ChinaDalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R China
Zhang, Yu
Liu, Yue
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Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R ChinaDalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R China
Liu, Yue
Wang, Xiao-Gang
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Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R ChinaDalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116024, Peoples R China