A new large area monolithic silicon telescope

被引：35
|
作者：
Tudisco, S
Amorini, F
Cabibbo, M
Cardella, G
De Geronimo, G
Di Pietro, A
Fallica, G
Figuera, P
Musumarra, A
Papa, M
Pappalardo, G
Rizzo, F
Valvo, G
机构：
[1] Ist Nazl Fis Nucl, Sez Catania, I-95129 Catania, Italy
[2] Ist Nazl Fis Nucl, Lab Nazl Sud, I-95126 Catania, Italy
[3] Univ Catania, Dipartmento Fis, I-95129 Catania, Italy
[4] Brookhaven Natl Lab, Instrumentat Div, Upton, NY 11973 USA
[5] STMicroelectronics, I-95121 Catania, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 426卷 / 2-3期
关键词：
implanted silicon telescope; large capacitance preamplifier; charge discrimination; side effects;
D O I：
10.1016/S0168-9002(98)01235-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A new prototype of large area (20 x 20 mm(2)) monolithic silicon telescope with an ultrathin Delta E stage (1 Gun) has been built and tested. A particular mask for the ground electrode has been developed to improve the charge collection reducing the induction between the E and Delta E stages. A special designed preamplifier has been used for the readout of the signal from the Delta E stage to overcome the problem of the large input capacitance (40 nF). A rather low energy threshold charge discrimination has been obtained. Small side effects due to the electric field deformation near the ground electrode were observed and quantified. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：436 / 445
页数：10
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