Stripes formation: Antiphase and in-phase domain walls

被引:8
|
作者
Zachar, O [1 ]
机构
[1] Univ Calif Los Angeles, Dept Phys, Los Angeles, CA 90095 USA
关键词
D O I
10.1103/PhysRevB.65.174411
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For stripes of hole rich lines in the doped antiferromagnets, we investigate the competition between antiphase and in-phase domain-wall ground-state configurations. We argue that a phase transition must occur as a function of the electron/hole filling fraction of the domain wall. Due to transverse kinetic hole fluctuations, empty domain walls are always antiphase. At arbitrary electron filling fraction delta of the domain wall (and in particular for deltaapproximate to1/4 as in LaNdSrCuO), it is essential to account also for the transverse magnetic interactions of the electrons and their mobility along the domain wall.
引用
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页码:1 / 11
页数:11
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