Optimizing the power confinement in silicon slot waveguides by use of Finite Element Method

被引：0
|
作者：
Leung, D. M. H. [1 ]
Kan, X. B. [1 ]
Rahman, B. M. A. [1 ]
Kejalakshmy, N. [1 ]
Grattan, K. T. V. [1 ]
机构：
[1] City Univ London, Sch Engn & Math Sci, Northampton Sq, London EC1V 0HB, England
来源：
2011 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE AND EXHIBITION (ACP) | 2012年
关键词：
Numerical approximation and analysis; Waveguides; Nanophotonics and photonic crystal;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the power confinement and the power density in the slot region of a vertical and horizontal slot waveguide are optimized; full-vectorial H and E-field profiles along with Poynting vector are also shown for both of these silicon waveguides. Bending loss of such slot waveguides is also presented.
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页数：6
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