Comparative Magneto-Photoluminescence Study of Ensembles and of Individual InAs Quantum Dots

被引:7
|
作者
Moskalenko, Evgenii S. [1 ,2 ]
Larsson, L. Arvid [1 ]
Larsson, Mats [1 ]
Holtz, Per Olof [1 ]
Schoenfeld, Winston V. [3 ]
Petroff, Pierre M. [3 ]
机构
[1] Linkoping Univ, IFM, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
基金
瑞典研究理事会;
关键词
FLUORESCENCE INTERMITTENCY; CARRIER RELAXATION; ELECTRIC-FIELD; GAAS; MOBILITY; ENERGY; STATES;
D O I
10.1021/nl803148q
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report on magneto-photoluminescence studies of InAs/GaAs quantum dots (QDs) of considerably different densities, from dense ensembles down to individual dots. It is found that a magnetic field applied in Faraday geometry decreases the photoluminescence (PL) intensity of OD ensembles, which is not accompanied by the corresponding increase of PL signal of the wetting layer on which ON are grown. The model suggested to explain these data assumes considerably different strengths of suppression of electron and hole fluxes by a magnetic field. This idea has been successfully checked in experiments on individual ON, where the PL spectra allow to directly monitor the charge state of a OD and, hence, to conclude about relative magnitudes of electron and hole fluxes toward the QD. Comparative studies of different individual QDs have revealed that the internal electric field in the sample (which was altered in the experiments in a controllable way) together with an external magnetic field will determine the charge state and emission intensity of the QDs.
引用
收藏
页码:353 / 359
页数:7
相关论文
共 50 条
  • [1] Magneto-Photoluminescence Spectroscopy of Single InAs/AlAs Quantum Dots
    Sarkar, D.
    van der Meulen, H. P.
    Calleja, J. M.
    Meyer, J. M.
    Haug, R. J.
    Pierz, K.
    11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11), 2010, 210
  • [2] Magneto-photoluminescence study of intermixed self-assembled InAs/GaAs quantum dots
    Ménard, S
    Beerens, J
    Morris, D
    Aimez, V
    Beauvais, J
    Fafard, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04): : 1501 - 1507
  • [3] Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots
    Maes, J
    Hayne, M
    Henini, M
    Pulizzi, F
    Patanè, A
    Eaves, L
    Moshchalkov, VV
    PHYSICA B-CONDENSED MATTER, 2004, 346 : 428 - 431
  • [4] Magneto-photoluminescence study of energy levels of self-organised InAs/GaAs quantum dots
    Oswald, J
    Kuldová, K
    Zeman, J
    Hulicius, E
    Jullian, S
    Potemski, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 : 318 - 323
  • [5] Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots
    Maes, J
    Henini, M
    Hayne, M
    Patanè, A
    Pulizzi, F
    Eaves, L
    Main, PC
    Moshchalkov, VV
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 186 - 191
  • [6] Magneto-photoluminescence study of electronic transitions in InAs/GaAs quantum dot layers
    Kuldová, K
    Oswald, J
    Zeman, J
    Hulicius, E
    Pangrác, J
    Melichar, K
    Simecek, T
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 88 (2-3): : 247 - 251
  • [7] Magneto-photoluminescence study of InGaAs quantum dots fabricated by droplet epitaxy
    Mano, T
    Watanabe, K
    Tsukamoto, S
    Imanaka, Y
    Takamasu, T
    Fujioka, H
    Kido, G
    Oshima, M
    Koguchi, N
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 7 (3-4): : 448 - 451
  • [8] Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures
    Terent'ev, Ya. V.
    Danilov, S. N.
    Loher, J.
    Schuh, D.
    Bougeard, D.
    Weiss, D.
    Durnev, M. V.
    Tarasenko, S. A.
    Mukhin, M. S.
    Ivanov, S. V.
    Ganichev, S. D.
    APPLIED PHYSICS LETTERS, 2014, 104 (10)
  • [9] Excitation Power Control of Circular Polarization of Magneto-Photoluminescence from InSb/InAs Quantum Dots
    Terent'ev, Ya. V.
    Mukhin, M. S.
    Toropov, A. A.
    Meltser, B. Ya.
    Semenov, A. N.
    Ivanov, S. V.
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [10] Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots
    Preisler, V.
    Grange, T.
    Ferreira, R.
    de Vaulchier, L. A.
    Guldner, Y.
    Teran, F. J.
    Potemski, M.
    Lemaitre, A.
    EUROPEAN PHYSICAL JOURNAL B, 2009, 67 (01): : 51 - 56