TM2+ : II-VI Mid-Infrared Materials

被引：2

作者：

Chen Yuanzhi ^{[1
,2
]}

Zhang Le ^{[1
,2
]}

Huang Cunxin ^{[3
]}

Zhang Jian ^{[1
,2
]}

Tang Dingyuan ^{[1
,2
]}

Shen Deyuan ^{[1
,2
]}

机构：

[1] Jiangsu Normal Univ, Sch Phys Elect Engn, Xuzhou 221116, Peoples R China

[2] Jiangsu Normal Univ, Jiangsu Key Lab Adv Laser Mat & Devices, Xuzhou 221116, Peoples R China

[3] Beijing Sinoma Synthet Crystal Co Ltd, Beijing 100018, Peoples R China

来源：

PROGRESS IN CHEMISTRY | 2015年 / 27卷 / 05期

基金：

中国国家自然科学基金;

关键词：

mid-infrared laser; II-VI group; preparation technology; DOPED ZNSE; FE-ZNSE; ZINC CHALCOGENIDES; SINGLE-CRYSTALS; VAPOR GROWTH; MU-M; LASER; CR2+-ZNSE; EFFICIENT; FABRICATION;

D O I：

10.7536/PC141137

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

TM2+ : II-VI compounds have become the most potential materials used for infrared laser due to the advantage of wide tunable range, small excited state absorption, high absorption and emission cross section and high quantum efficiency at room temperature. The research progress of TM2+ : II-VI laser materials are retrospect in this paper. Both the applications of TM2+ : II-VI materials in laser devices and their preparation methods are reviewed, respectively. The laser performance of typical TM2+ : II-VI mid-infrared materials are summarized in detail, and the preparation methods for monocrystalline and polycrystalline of these materials are listed systematically. At last, the existing problems in this field are pointed out, and the development prospects and research trends are prospected.

引用

页码：511 / 521

页数：11

共 83 条

[1] Adams J J, 1999, OPTICAL SOC AM, pWD3
[2] 4.0-4.5-μm lasing of Fe:ZnSe below 180 K, a new mid-infrared laser material
Adams, JJ
Bibeau, C
Page, RH
Krol, DM
Furu, LH
Payne, SA
[J]. OPTICS LETTERS, 1999, 24 (23) : 1720 - 1722
[3] Efficient pulsed Cr2+:CdSe laser continuously tunable in the spectral range from 2.26 to 3.61
Akimov, V. A.
Kozlovskii, V. I.
Korostelin, Yu. V.
Landman, A. I.
Podmar'kov, Yu. P.
Skasyrskii, Ya. K.
Frolov, M. P.
[J]. QUANTUM ELECTRONICS, 2008, 38 (03) : 205 - 208
[4] High-power, widely-tunable Cr2+:ZnSe master oscillator power amplifier systems
Berry, P. A.
Schepler, K. L.
[J]. OPTICS EXPRESS, 2010, 18 (14): : 15062 - 15072
[5] Fabrication and power scaling of a 1.7 W Cr:ZnSe waveguide laser
Berry, Patrick A.
Macdonald, John R.
Beecher, Stephen J.
McDaniel, Sean A.
Schepler, Kenneth L.
Kar, Ajoy K.
[J]. OPTICAL MATERIALS EXPRESS, 2013, 3 (09): : 1250 - 1258
[6] Observation of lasing from Cr2+:CdTe and compositional effects in Cr2+-doped II-VI semiconductors
Bluiett, AG
Hömmerich, B
Shah, RT
Trivedi, SB
Kutcher, SW
Wang, CC
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (07) : 806 - 810
[7] Preparation conditions of chromium doped ZnSe and their infrared luminescence properties
Burger, A
Chattopadhyay, K
Ndap, JO
Ma, X
Morgan, SH
Rablau, CI
Su, CH
Feth, S
Page, RH
Schaffers, KI
Payne, SA
[J]. JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) : 249 - 256
[8] CARNALL E, 1966, MATER SCI RES, V3, P165
[9] Chen H, 1979, LASER INFRARED, P1
[10] Chen M, 2013, SPIE SIOM PACIFIC RI

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