A study of electrically active traps in AlGaN/GaN high electron mobility transistor

被引：12

作者：

Yang, Jie ^{[1
]}

Cui, Sharon ^{[1
]}

Ma, T. P. ^{[1
]}

Hung, Ting-Hsiang ^{[2
]}

Nath, Digbijoy ^{[2
]}

Krishnamoorthy, Sriram ^{[2
]}

Rajan, Siddharth ^{[2
]}

机构：

[1] Yale Univ, Dept Elect & Comp Engn, New Haven, CT 06511 USA

[2] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 17期

基金：

美国国家科学基金会;

关键词：

MOLECULAR-BEAM EPITAXY; LEAKAGE CURRENT; GAN; PERFORMANCE;

D O I：

10.1063/1.4826922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied electron conduction mechanisms and the associated roles of the electrically active traps in the AlGaN layer of an AlGaN/GaN high electron mobility transistor structure. By fitting the temperature dependent I-V (Current-Voltage) curves to the Frenkel-Poole theory, we have identified two discrete trap energy levels. Multiple traces of I-V measurements and constant-current injection experiment all confirm that the main role of the traps in the AlGaN layer is to enhance the current flowing through the AlGaN barrier by trap-assisted electron conduction without causing electron trapping. (C) 2013 AIP Publishing LLC.

引用

页数：3

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