Lock-in Infrared Thermography: a tool to locate and analyse failures in power devices

被引：0
|
作者：
Vellvehi, M. [1 ]
Perpina, X. [1 ]
Leon, J. [1 ]
Sanchez, D. [1 ]
Jorda, X. [1 ]
Millan, J. [1 ]
机构：
[1] CSIC, CNM, IMB, Campus UAB, Cerdanyola Del Valles 08193, Barcelona, Spain
来源：
2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) | 2017年
关键词：
Tnfrared Thermography; lock-in modulation; power devices; failure analysis;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, Lock-in Infrared Thermography (LIT) is presented as a powerful tool for failure analysis in power devices. These devices are electrically characterized in the frequency domain by thermal means to activate weak spots responsible for their misbehavior. As case studies, two different power devices are inspected using the LIT technique: a Vertical Double Diffused MOS (VDMOS) presenting an elevated gate leakage current and a SiC Schottky Barrier Diode with Tungsten contact (W-SBD) presenting a Schottky barrier modification by metal contact change.
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页数：4
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