Coulomb-Blockade Charge-Transport Mechanism in Band-to-Band Tunneling in Heavily-Doped Low-Dimensional Silicon Esaki Diodes

被引：0

作者：

Prabhudesai, G. ^{[1
]}

Yamaguchi, K. ^{[1
,2
]}

Tabe, M. ^{[1
]}

Moraru, D. ^{[1
,2
]}

机构：

[1] Shizuoka Univ, Res Inst Elect, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan

[2] Shizuoka Univ, Grad Sch Integrated Sci & Technol, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan

来源：

2020 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2020年

关键词：

D O I：

10.1109/snw50361.2020.9131628

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Band-to-band tunneling (BTBT), with its key role as a transport mechanism in Esaki (tunnel) diodes, has been studied extensively for about 60 years. In such devices, it is expected that energy states of ionized dopants in the depletion-layer can affect the BTBT mechanism. In this paper, we introduce the observation and analysis of a novel transport mechanism in Si Esaki diodes: single-charge BTBT transport mediated by donor-cluster quantum-dots, statistically expected in the depletion-layer of nanoscale Esaki diodes. This demonstration can open new pathways for band-to-band tunneling devices.

引用

页码：109 / 110

页数：2