Moire and beyond in transition metal dichalcogenide twisted bilayers

被引:42
|
作者
Tran, Kha [1 ]
Choi, Junho [2 ]
Singh, Akshay [3 ]
机构
[1] Naval Res Lab, 4555 Overlook Ave SW, Washington, DC 20375 USA
[2] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA
[3] Indian Inst Sci, Dept Phys, Bengaluru 560012, Karnataka, India
基金
美国国家科学基金会;
关键词
moiré excitons; twisted bilayers; transition metal dichalcogenides; lattice reconstruction; interlayer excitons; intralayer excitons;
D O I
10.1088/2053-1583/abd3e7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Fabricating van der Waals bilayer heterostructures (BL-HS) by stacking the same or different two-dimensional layers, offers a unique physical system with rich electronic and optical properties. Twist-angle between component layers has emerged as a remarkable parameter that can control the period of lateral confinement, and nature of the exciton (Coulomb bound electron-hole pair) in reciprocal space thus creating exotic physical states including moire excitons (MXs). In this review article, we focus on opto-electronic properties of excitons in transition metal dichalcogenide semiconductor twisted BL-HS. We look at existing evidence of MXs in localized and strongly correlated states, and at nanoscale mapping of moire superlattice and lattice-reconstruction. This review will be helpful in guiding the community as well as motivating work in areas such as near-field optical measurements and controlling the creation of novel physical states.
引用
收藏
页数:15
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