Optical properties of strain-compensated hybrid InGaN/InGaN/ZnO quantum well light-emitting diodes

被引：5
|
作者：
Park, S. -H. [1 ]
Ryu, S. -W. [1 ]
Kim, J. -J. [1 ]
Hong, W. -P. [1 ]
Kim, H. -M [1 ]
Park, J. [2 ]
Lee, Y. -T. [3 ]
机构：
[1] Catholic Univ Daegu, Dept Elect Engn, Kyongsan 712702, Kyongbuk, South Korea
[2] Gwangju Res Ctr, Korea Inst Ind Technol, Energy & Appl Opt Team, Gwangju 500480, South Korea
[3] Gwangju Inst Sci & Technol, Dept Informat & Commun, Gwangju 500712, South Korea
来源：
NUSOD '08: PROCEEDINGS OF THE 8TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES | 2008年
关键词：
D O I：
10.1109/NUSOD.2008.4668213
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical properties of 530 rim strain-compensated InGaN/InGaN/ZnO quantum well (QW) light-emitting diodes (LEDs) using a ZnO substrate are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW LEDs using a GaN substrate. A strain-compensated QW structure is found to have much larger spontaneous emission than a InGaN/GaN QW structure. This can be explained by the reduction in the internal field due to the piezoelectric and spontaneous polarizations.
引用
收藏
页码：3 / +
页数：2
相关论文
共 50 条
  • [1] Electronic and optical properties of 530 nm strain-compensated hybrid InGaN/InGaN/ZnO quantum well light-emitting diodes
    Park, Seoung-Hwan
    Lee, Yong-Tak
    Park, Jongwoon
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (03)
  • [2] Enhancement of light power for strain-compensated hybrid InGaN/InGaN/MgZnO light-emitting diodes
    Park, Seoung-Hwan
    Moon, Yong-Tae
    Lee, Jeong Sik
    Kwon, Ho Ki
    Park, Joong Seo
    Ahn, Doyeol
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (12)
  • [3] Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes
    Chia-Lung Tsai
    Gong-Cheng Fan
    Yu-Sheng Lee
    [J]. Applied Physics A, 2011, 104 : 319 - 323
  • [4] Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes
    Tsai, Chia-Lung
    Fan, Gong-Cheng
    Lee, Yu-Sheng
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 104 (01): : 319 - 323
  • [5] Light Emission Characteristics of Blue Strain-compensated InGaN/InGaN/InGaN Light-Emitting Diodes
    Park, Seoung-Hwan
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2015, 66 (02) : 277 - 281
  • [6] Light emission characteristics of blue strain-compensated InGaN/InGaN/InGaN light-emitting diodes
    Seoung-Hwan Park
    [J]. Journal of the Korean Physical Society, 2015, 66 : 277 - 281
  • [7] Reduction of efficiency droop in green strain-compensated InGaN/InGaN light-emitting diodes grown on InGaN substrate
    Park, Seoung-Hwan
    Chung, Tae-Hoon
    Baek, Jong Hyeob
    Ahn, Doyeol
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (02)
  • [8] Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes
    Park, Seoung-Hwan
    Ahn, Doyeol
    Koo, Bun-Hei
    Kim, Jong-Wook
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (11): : 2637 - 2640
  • [9] Enhanced Luminescence of InGaN Light Emitting Diodes with Strain-Compensated Superlattice Barriers
    Tsai, Chia-Lung
    Liu, Guan-Shan
    Lee, Yu-Sheng
    Fan, Gong-Cheng
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (03) : H260 - H263
  • [10] Self-Consistent Analysis of Strain-Compensated InGaN-AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
    Zhao, Hongping
    Arif, Ronald A.
    Ee, Yik-Khoon
    Tansu, Nelson
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2009, 45 (1-2) : 66 - 78
12345