Activation of acceptor levels in Mn implanted Si by pulsed laser annealing

被引：0
|
作者：
Li, Lin [1 ]
Buerger, Danilo [2 ]
Shalimov, Artem [3 ]
Kovacs, Gy J. [3 ]
Schmidt, Heidemarie [2 ,4 ]
Zhou, Shengqiang [3 ]
机构：
[1] Beijing Univ Chem Technol, Sch Sci, Dept Phys & Elect, Beijing 100029, Peoples R China
[2] Tech Univ Chemnitz, Mat Syst Nanoelect, D-09126 Chemnitz, Germany
[3] HZDR, Inst Ionenstrahlphys & Mat Forsch, POB 510119, D-01314 Dresden, Germany
[4] Leibniz Inst Photon Technol IPHT, D-07745 Jena, Germany
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 16期
基金：
中国国家自然科学基金;
关键词：
acceptor; silicon; pulsed laser annealing; ferromagnetism; MAGNETIC-PROPERTIES; DOPED SILICON; SEMICONDUCTORS; FERROMAGNETISM;
D O I：
10.1088/1361-6463/aab5a6
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, we report the magnetic and electrical properties of Mn implanted nearly intrinsic Si wafers after subsecond thermal treatment. Activation of acceptors is realized in pulsed laser annealing (PLA) films with a free hole concentration of 6.29 x 10(20) cm(-3) while the sample annealed by rapid thermal annealing (RTA) shows n-type conductivity with a much smaller free electron concentration in the order of 10(15) cm(-3). Ferromagnetism is probed for all films by a SQUID magnetometer at low temperatures. The formation of ferromagnetic MnSi1.7 nanoparticles which was proven in RTA films can be excluded in Mn implanted Si annealed by PLA.
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页数：6
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