Controlled preparation and mechanism study of one-dimensional silicon nanomaterials

被引：0
|
作者：
Zhang Xiaodan [1 ,2 ]
Cao Yang [1 ]
He Junhui [1 ]
机构：
[1] Chinese Acad Sci, Tech Inst Phys & Chem, Funct Nanomat Lab, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
来源：
PROGRESS IN CHEMISTRY | 2008年 / 20卷 / 7-8期
关键词：
one-dimensional silicon nanomaterials; controlled preparation; growth mechanism;
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
One-dimensional silicon nanomaterials have unique optoclectronic properties compared with bulk silicon materials, and possess potential applications in optical and electronic fields. Their physicochemical properties can be tuned by tailoring their size, morphology and composition. Therefore, it is extremely important to explore and realize controlled preparation of one-dimensional silicon nanomaterials for their future applications. The recent progress in controlled preparation of one-dimensional silicon nanomaterials is reviewed. Several important preparation methods and their growth mechanisms are introduced, and the advantages and disadvantages of these different methods in controlled preparation of one-dimensional silicon nanomaterials are discussed. The research trends for their future are prospected.
引用
收藏
页码：1064 / 1072
页数：9
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