Fast Switching in Thermoelectric Spin-Transfer Torque MRAM with Temperature Increase Caused by Peltier Effect

A new alternative data storage technology of nonvolatile memory, thermoelectric spin-transfer torque MRAM (TSTT-MRAM), is discussed in this paper. In principle, in the TSTT-MRAM mechanism the current is applied in the thermoelectric cell and the magnetic tunnel junction (MTJ) cell. The finite-element method and micromagnetic model were used to explore the magnetic degradation and switching mechanism in the TSTT-MRAM with temperature increases caused by a Peltier effect. The results showed that the temperature in the MTJ magnetic layers increased with increasing bias current into the thermoelectric device. For the switching process, the increased temperature affected the fluctuation of the saturation magnetization and lead to a decrease in the switching time when considering the same critical current. Thus, the fast switching process with TSTT-MRAM devices is interesting for the development of the future memory technology.