A novel 2-12 GHz 14 dBm High Efficiency Power Distributed Amplifier for Ultra-Wideband-Applications Using a Low-Cost SiGe BiCMOS Technology

In this paper the analysis, design and measurement results of a novel 2-12 GHz power distributed amplifier for ultra-wideband radar and sensing applications is presented. The amplifier is fabricated in a low-cost 0.25 mu m SiGe BiCMOS technology with a transit frequency of 25 GHz. The circuit integrates four cascode gain cells, which are capacitively coupled to the base tine for power optimization. The collector line has been tapered for efficiency improvement. More than 14 dBm have been measured in the desired frequency range with an associated gain of 9 dB and a gain flatness of +/- 0.5 dB with total power consumption of 250 mW. To the authors knowledge, this is the highest output power achieved by a distributed amplifier in SiGe technology in this frequency range. The chip size of the compact amplifier is 1.16 mm(2). Good agreement between simulation and measurement were achieved.