ALD precursor chemistry:: Evolution and future challenges

被引:31
|
作者
Leskelä, M [1 ]
Ritala, M [1 ]
机构
[1] Univ Helsinki, Dept Chem, Helsinki 00014, Finland
来源
JOURNAL DE PHYSIQUE IV | 1999年 / 9卷 / P8期
关键词
D O I
10.1051/jp4:19998106
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The requirements of ALD precursors differ from those of CVD concerning thermal stability, adsorption on the surface, and reactions towards each other. In the first ALD experiments in the 70s elements (Zn, Cd, S), metal halides and non-metal hydrides (H2O, H2S) were used. In the 80s the selection of precursors widened to metal complexes (alkoxides, P-diketonates) and simple organometallics (alkyl compounds). In the 90s both new metal (Cp-compounds, alkylamides) as well as non-metal precursors (H2O2, O-3, hydrazine) have been introduced. A characteristic feature of ALD is that surface groups play an important role as reactive sites for tl-le next precursor pulse. The development of ALD precursors is limited by the small number of groups working in the field It seems, however, that the precuror development is diverged and tailored molecules are designed for each process.
引用
收藏
页码:837 / 852
页数:16
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