Effect of Addition of Al to Single-Crystalline CoFe Electrodes on Nonlocal Spin Signals in Lateral Spin-Valve Devices

被引:22
|
作者
Oki, Soichiro [1 ]
Yamada, Shinya [1 ]
Hashimoto, Naoki [1 ]
Miyao, Masanobu [1 ,2 ]
Kimura, Takashi [2 ,3 ]
Hamaya, Kohei [1 ]
机构
[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan
[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1028666, Japan
[3] Kyushu Univ, INAMORI Frontier Res Ctr, Fukuoka 8190395, Japan
基金
日本学术振兴会;
关键词
ROOM-TEMPERATURE; MAGNETORESISTANCE; INJECTION;
D O I
10.1143/APEX.5.063004
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using single-crystalline spin injectors and detectors, we examine the effect of the addition of Al to CoFe electrodes on nonlocal spin signals in metallic lateral spin valves (LSVs). A molecular beam epitaxy technique enables us to obtain Heusler-alloy-like CoFeAl epitaxial layers with an ordered B2 structure. The LSVs with the CoFeAl electrodes show a remarkable enhancement of the nonlocal spin signals, six times larger than that of the LSV with the CoFe electrodes, at room temperature. The relatively low electrical resistivity of the CoFeAl electrodes means that the enhancement of the spin signals originates from an increase in the spin polarization due to the Al addition to CoFe. (C) 2012 The Japan Society of Applied Physics
引用
收藏
页数:3
相关论文
共 50 条
  • [1] Spin-related thermoelectric conversion in lateral spin-valve devices with single-crystalline Co2FeSi electrodes
    Yamasaki, Kento
    Oki, Soichiro
    Yamada, Shinya
    Kanashima, Takeshi
    Hamaya, Kohei
    APPLIED PHYSICS EXPRESS, 2015, 8 (04)
  • [2] Gate Field Effect on Spin Transport Signals in a Lateral Spin-Valve Device
    Kwon, Jae Hyun
    Koo, Hyun Cheol
    Cmang, Joonyeon
    Han, Suk-Hee
    Eom, Jonghwa
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (05) : 2491 - 2495
  • [3] Thermal magnetization fluctuations in CoFe spin-valve devices (invited)
    Smith, N
    Synogatch, V
    Mauri, D
    Katine, JA
    Cyrille, MC
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) : 7454 - 7457
  • [4] Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
    Fujita, Y.
    Yamada, M.
    Tsukahara, M.
    Naito, T.
    Yamada, S.
    Sawano, K.
    Hamaya, K.
    PHYSICAL REVIEW B, 2019, 100 (02)
  • [5] Inverse spin-valve effect in nanoscale Si-based spin-valve devices
    Duong Dinh Hiep
    Tanaka, Masaaki
    Pham Nam Hai
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (22)
  • [6] Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices
    Ishikawa, Mizue
    Tsukahara, Makoto
    Honda, Syuta
    Fujita, Yuichi
    Yamada, Michihiro
    Saito, Yoshiaki
    Kimura, Takashi
    Itoh, Hiroyoshi
    Hamaya, Kohei
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (08)
  • [7] Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs
    Asahara, Hirokatsu
    Kanaki, Toshiki
    Ohya, Shinobu
    Tanaka, Masaaki
    APPLIED PHYSICS EXPRESS, 2018, 11 (03)
  • [8] Effect of probe configuration on spin accumulation in lateral spin-valve structure
    Kimura, T
    Hamrle, J
    Otani, Y
    Tsukagoshi, K
    Aoyagi, Y
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2005, 286 : 88 - 90
  • [9] Spin-Valve Effect in Junctions with a Single Ferromagnet
    Yao, Fengrui
    Multian, Volodymyr
    Watanabe, Kenji
    Taniguchi, Takashi
    Gutierrez-Lezama, Ignacio
    Morpurgo, Alberto F.
    NANO LETTERS, 2025, 25 (09) : 3549 - 3555
  • [10] Optimization of nanopatterned permalloy electrodes for a lateral hybrid spin-valve structure
    Last, T.
    Hacia, S.
    Wahle, M.
    Fischer, S.F.
    Kunze, U.
    Journal of Applied Physics, 2004, 96 (11): : 6706 - 6711