Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells

被引：9
|
作者：
Marquardt, Oliver [1 ]
Hickel, Tilmann [1 ]
Neugebauer, Joerg [1 ]
Van de Walle, Chris G. [2 ]
机构：
[1] Max Planck Inst Eisenforsch GmbH, D-40237 Dusseldorf, Germany
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 07期
基金：
美国国家科学基金会;
关键词：
STRAINED WURTZITE SEMICONDUCTORS; III-V NITRIDES; ELECTRONIC-PROPERTIES; FIELDS; DOTS;
D O I：
10.1063/1.4818752
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have employed continuum elasticity theory and an eight band k . p model to study the influence of thickness fluctuations in In0.2Ga0.8N quantum wells grown along the [11 (2) over bar0] direction in GaN. Such fluctuations are the origin of polarization potentials that may spatially separate electrons and holes in the vicinity of a thickness fluctuation and therefore reduce the efficiency of light emitters. Our calculations reveal that even shallow fluctuations of one or two monolayers can induce a significant spatial separation of electrons and holes, in particular, if the lateral extent of such a fluctuation is large. (C) 2013 AIP Publishing LLC.
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页数：4
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