An Ultrahigh-Resolution Digital Image Sensor with Pixel Size of 50 nm by Vertical Nanorod Arrays

被引:52
|
作者
Jiang, Chengming [1 ]
Song, Jinhui [1 ]
机构
[1] Univ Alabama, Dept Met & Mat Engn, Ctr Mat Informat Technol MINT, Tuscaloosa, AL 35487 USA
关键词
nanorod image sensors; photon-effect transistors; 3D vertical array pixels; ultrahigh-resolution image sensors; 3D nanoconfinement; ZNO NANOWIRE ARRAYS; PHOTODETECTORS;
D O I
10.1002/adma.201502079
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The pixel size limit of existing digital image sensors is successfully overcome by using vertically aligned semiconducting nanorods as the 3D photosensing pixels. On this basis, an unprecedentedly high-resolution digital image sensor with a pixel size of 50 nm and a resolution of 90 nm is fabricated. The ultrahigh-resolution digital image sensor can heavily impact the field of visual information.
引用
收藏
页码:4454 / 4460
页数:7
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