Observation of the orbital circular photogalvanic effect

被引：26

作者：

Olbrich, P. ^{[1
]}

Tarasenko, S. A. ^{[2
]}

Reitmaier, C. ^{[1
]}

Karch, J. ^{[1
]}

Plohmann, D. ^{[1
]}

Kvon, Z. D. ^{[3
]}

Ganichev, S. D. ^{[1
]}

机构：

[1] Univ Regensburg, Terahertz Ctr, D-93040 Regensburg, Germany

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 12期

关键词：

elemental semiconductors; MOSFET; photoconductivity; photovoltaic effects; silicon; BULK GAAS;

D O I：

10.1103/PhysRevB.79.121302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the observation of the circular photogalvanic effect in Si-metal-oxide-semiconductor field-effect transistors with inversion channel excited by terahertz radiation. We demonstrate that in spite of the fact that the photocurrent is caused by transfer of the photon angular momentum to free carriers, it is not due to spin orientation but has a pure orbital origin. It results from the quantum interference of different pathways contributing to the free-carrier absorption of monochromatic radiation.

引用

页数：4

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