Compensation of self-heating effect in DC and pulse characteristics of HBTs

被引:0
|
作者
Zhu, Y [1 ]
Twynam, JK [1 ]
Yagura, M [1 ]
Hasegawa, M [1 ]
Hasegawa, T [1 ]
Eguchi, Y [1 ]
Amano, Y [1 ]
Suematsu, E [1 ]
Sakuno, K [1 ]
Matsumoto, N [1 ]
Sato, H [1 ]
Hashizume, N [1 ]
机构
[1] Sharp Co Ltd, Adv Technol Labs, Tenri, Nara 632, Japan
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A simple technique to compensate self-heating effect in DC and pulse characteristics of HBTs is proposed and demonstrated. Due to the cancellation of the positive and negative thermal-electric feedback inside HBTs, the compensation is achieved by inserting a specified resistance in the base bias circuit, An analytical expression specifying the resistance is also presented.
引用
收藏
页码:431 / 434
页数:4
相关论文
共 50 条
  • [1] Self-heating effect compensation in HBTs and its analysis and simulation
    Zhu, Y
    Twynam, JK
    Yagura, M
    Hasegawa, M
    Hasegawa, T
    Eguchi, Y
    Amano, Y
    Suematsu, E
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (11) : 2640 - 2646
  • [2] Characterization of self-heating in Si-Ge HBTs with pulse, DC and AC measurements
    Sahoo, Amit Kumar
    Fregonese, Sebastien
    Weiss, Mario
    Grandchamp, Brice
    Malbert, Nathalie
    Zimmer, Thomas
    [J]. SOLID-STATE ELECTRONICS, 2012, 76 : 13 - 18
  • [3] Modelling of self-heating effects in SiGe-HBTs
    Senapati, B
    Maiti, CK
    [J]. PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 718 - 720
  • [4] Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors
    McAlister, S. P.
    Bardwell, J. A.
    Haffouz, S.
    Tang, H.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (03): : 624 - 628
  • [5] A Pragmatic Approach to Modeling Self-Heating Effects in SiGe HBTs
    Yadav, Shon
    Chakravorty, Anjan
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (12) : 4844 - 4849
  • [6] Correcting the output conductance for self-heating in InAlAs/InGaAs HBTs
    Weiss, Oliver
    Baureis, Peter
    Kellmann, Nikolai
    Weber, Norbert
    Weigel, Robert
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) : 2231 - 2236
  • [7] The Effect of Self-Heating on the Modulation Characteristics of a Microdisk Laser
    A. E. Zhukov
    E. I. Moiseev
    A. M. Nadtochii
    N. V. Kryzhanovskaya
    M. M. Kulagina
    S. A. Mintairov
    N. A. Kalyuzhnyi
    F. I. Zubov
    M. V. Maximov
    [J]. Technical Physics Letters, 2020, 46 : 515 - 519
  • [8] The Effect of Self-Heating on the Modulation Characteristics of a Microdisk Laser
    Zhukov, A. E.
    Moiseev, E., I
    Nadtochii, A. M.
    Kryzhanovskaya, N., V
    Kulagina, M. M.
    Mintairov, S. A.
    Kalyuzhnyi, N. A.
    Zubov, F., I
    Maximov, M., V
    [J]. TECHNICAL PHYSICS LETTERS, 2020, 46 (06) : 515 - 519
  • [9] A unified model for single/multifinger HBTs including self-heating effects
    Garlapati, A
    Prasad, S
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (01) : 186 - 191
  • [10] Self-Heating Characterization of SiGe: C HBTs by Extracting Thermal Impedances
    Hasnaoui, I.
    Pottrain, A.
    Gloria, D.
    Chevalier, P.
    Avramovic, V.
    Gaquiere, C.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (12) : 1762 - 1764