Ultrafast transverse thermoelectric response in c-axis inclined epitaxial La0.5Sr0.5CoO3 thin films

被引:27
|
作者
Yu, Lan [1 ,2 ]
Wang, Yong [1 ,3 ]
Zhang, Pengxiang [1 ]
Habermeier, Hanns-Ulrich [2 ]
机构
[1] Kunming Univ Sci & Technol, Fac Mat Sci & Engn, Inst Adv Mat Photoelectrons, Kunming 650051, Peoples R China
[2] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
[3] Univ Lorraine, Inst Jean Lamour, UMR CNRS 7198, F-54011 Nancy, France
来源
关键词
epitaxy; thin films; transverse thermoelectric effect; ultrafast response; La0.5Sr0.5CoO3; LA1-XCAXMNO3; RESISTIVITY; RESISTANCE; ANISOTROPY; VOLTAGES; CERAMICS;
D O I
10.1002/pssr.201307002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ultrafast transverse thermoelectric voltage response has been observed in c-axis inclined epitaxial La0.5Sr0.5CoO3 thin films. Voltage signals with the rise time of 7 ns have been detected under the irradiation of pulse laser with duration of 28 ns. A concept, named response rate ratio, has been proposed to evaluate the intrinsic response rate, and this ratio in La0.5Sr0.5CoO3 is smaller than that in other reported materials. The low resistivity is thought to be responsible for the ultrafast response, as low resistivity induces small optical penetration depth, and response time has a monotonous increasing relationship with this depth. [GRAPHICS] . Transverse thermoelectric voltage with the rise time of 7 ns in La0.5Sr0.5CoO3 thin film. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:180 / 183
页数:4
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