Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires

被引:11
|
作者
Lindgren, David [1 ]
Kawaguchi, Kenichi [1 ,2 ]
Heurlin, Magnus [1 ]
Borgstrom, Magnus T. [1 ]
Pistol, Mats-Erik [1 ]
Samuelson, Lars [1 ]
Gustafsson, Anders [1 ]
机构
[1] Lund Univ, Solid State Phys & Nanometer Struct Consortium, SE-22100 Lund, Sweden
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
基金
瑞典研究理事会;
关键词
D O I
10.1088/0957-4484/24/22/225203
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Correlated micro-photoluminescence (mu PL) and cathodoluminescence (CL) measurements are reported for single core-shell InP-InAs wurtzite nanowires grown using metal-organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1-12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by mu PL and the spatial origin of the emission was identified with CL imaging.
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页数:5
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