Characterization of Cu(In,Ga)Se2 thin films prepared via a sputtering route with a following selenization process

被引：14

作者：

Wu, Chung-Hsien ^{[1
]}

Chen, Fu-Shan ^{[1
]}

Lin, Shin-Hom ^{[1
]}

Lu, Chung-Hsin ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 10764, Taiwan

来源：

CERAMICS INTERNATIONAL | 2013年 / 39卷 / 03期

关键词：

Cu(In; Ga)Se-2; Solar cells; Sputtering; SELENIUM;

D O I：

10.1016/j.ceramint.2012.08.082

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Cu(In,Ga)Se-2 films were prepared via a sputtering route with a following selenization process. In, Cu In, and Cu3Ga were observed in the precursor films. Selenization at 450 degrees C yielded monophasic Cu(In,Ga)Se-2 films. The diffraction angles of the (112) peaks shifted toward high angles, and a uniform morphology of the obtained films was observed with high-temperature selenization. The amount of gallium ions incorporated into indium ions increased with the temperature. The probable formation mechanism of the sputtering-derived Cu(In,Ga)Se-2 was proposed. Firstly, selenium species diffuse into the precursor films to form Cu(In,Ga)Se-2 and Cu2-xSe phases. Subsequently, the complete reaction of selenium with residual species leads to the formation reaction of single-phased Cu(In,Ga)Se-2. An efficiency of 8.34% was achieved for the fabricated solar cell. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：3393 / 3397

页数：5

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