Stress induced domain formation in LiNbO3 single crystals

被引：6
|
作者：
Choi, JK
Auh, KH
机构：
[1] Department of Inorganic Materials Engineering, Hanyang University, Sungdong-Ku, Seoul, 133-791
来源：
JOURNAL OF MATERIALS SCIENCE | 1996年 / 31卷 / 03期
关键词：
D O I：
10.1007/BF00367880
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The domain formation phenomenon of LiNbO3 crystals was investigated in this study. A stress induced domain formation mechanism was proposed, and domain formation of the as-grown crystals and domain inversion of substrate crystals were explained. The strong piezoelectric effect of LiNbO3 at elevated temperature, could be the direct driving force for inversion of the spontaneous polarization direction and could form domain walls. It was found that the tensile component of the internal stresses can inverse the original direction of the spontaneous polarization.
引用
收藏
页码：643 / 647
页数：5
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