Laser-frequency dependence of Raman modes in GaAs-AlAs superlattices

被引:1
|
作者
Spencer, GS [1 ]
Menendez, J [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
基金
美国国家科学基金会;
关键词
phonons; optical properties; ineleastic light scattering; semiconductors;
D O I
10.1016/0038-1098(95)00595-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The excitation frequency dependence of the Raman spectra in short-period GaAs-AlAs superlattices is studied. The off-resonance Raman spectra can be explained by a disorder-induced breakdown of wave-vector conservation leading to the contribution of small magnitude, random orientation wave-vector phonons. As extreme resonance is approached, double-resonance effects cause phonons with large magnitude, preferentially in-plane wave-vectors to dominate the Raman spectrum.
引用
收藏
页码:21 / 25
页数:5
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