Technetium Incorporation into Goethite (α-FeOOH): An Atomic-Scale Investigation

被引:56
|
作者
Smith, Frances N. [1 ]
Taylor, Christopher D. [2 ,3 ]
Um, Wooyong [1 ]
Kruger, Albert A. [4 ]
机构
[1] Pacific NW Natl Lab, Richland, WA 99354 USA
[2] Ohio State Univ, Fontana Corros Ctr, Mat Sci & Engn, Columbus, OH 43210 USA
[3] DNV GL, Strateg Res & Innovat, Dublin, OH 43017 USA
[4] US DOE, Off River Protect, Richland, WA 99352 USA
关键词
IRON; HEMATITE; IMMOBILIZATION; AL; CHEMISTRY; CORROSION; URANIUM;
D O I
10.1021/acs.est.5b03354
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
During the processing of low-activity radioactive waste to generate solid waste forms (e.g., glass), technetium-99 (Tc) is of concern because of its volatility. A variety of materials are under consideration to capture Tc from waste streams, including the iron oxyhydroxide, goethite (alpha-FeOOH), which was experimentally shown to sequester Tc(IV). This material could ultimately be incorporated into glass or alternative low-temperature waste form matrices. However, questions remain regarding the incorporation mechanism for Tc(IV) in goethite, which has implications for predicting the long-term stability of Tc in waste forms under changing conditions. Here, quantum-mechanical calculations were used to evaluate the energy of five different charge-compensated Tc(IV) incorporation scenarios in goethite. The two most stable incorporation mechanisms involve direct substitution of Tc(IV) onto Fe(III) lattice sites and charge balancing either by removing one nearby H+ (i.e., within 5 angstrom) or by creating an Fe(III) vacancy when substituting 3 Tc(IV) for 4 Fe(III), with the former being preferred over the latter relative to gas-phase ions. When corrections for hydrated references phases are applied, the Fe(III)-vacancy mechanism becomes more energetically competitive. Calculated incorporation energies and optimized bond lengths are presented. Proton movement is observed to satisfy undercoordinated bonds surrounding Fe(III)-vacancies in the goethite structure.
引用
收藏
页码:13699 / 13707
页数:9
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