Two-dimensional diffusion characterization of boron in silicon using Reverse Modeling

被引：0

作者：

Shauly, EN ^{[1
]}

Ghez, R ^{[1
]}

Komem, Y ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Fac Mat Engn, IL-36000 Haifa, Israel

来源：

SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work deals with the simulation of two-dimensional impurity diffusion in CMOS silicon devices. The Reverse Modeling method was used to determine the diffusion coefficient (DI), surface recombination rate of defects (K-1) and the characteristics of the injecting source. Analysis showed similarity between D-1 in 2-D system compared with the value obtained from non-patterned samples. The results for D-1 and K-1 are very well described by the Arrhenius expressions. D-1 was found to be related to the substrate type e.g. EPI or CZ. The values of K-1 related to the interface type, oxidizing or non-oxidizing (SiO2 or Si3N4).

引用

页码：384 / 387

页数：4

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