Large Piezoelectricity and Ferroelectricity in Mn-Doped (Bi0.5Na0.5)TiO3-BaTiO3 Thin Film Prepared by Pulsed Laser Deposition

被引：32
|
作者：
Lin, Qianru [1 ]
Ding, Rui [1 ]
Li, Qian [2 ]
Tay, Yee Yan [3 ,4 ]
Wang, Danyang [1 ]
Liu, Yun [2 ]
Huang, Yizhong [4 ]
Li, Sean [1 ]
机构：
[1] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[2] Australian Natl Univ, Res Sch Chem, GPO Box 4, Canberra, ACT 2601, Australia
[3] Nanyang Technol Univ, Facil Anal Characterizat Testing & Simulat, 50 Nanyang Ave, Singapore 639798, Singapore
[4] Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2016年 / 99卷 / 07期
基金：
澳大利亚研究理事会;
关键词：
bismuth titanates; thin films; dopants/doping; ferroelectricity/ferroelectric materials; piezoelectric materials/properties; DIELECTRIC-PROPERTIES;
D O I：
10.1111/jace.14227
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Mn-doped ( Bi0.5Na0.5)(0.94)Ba0.06TiO3 ( MnBNBT) thin films were prepared on SrRuO3 ( SRO)-coated ( 001) SrTiO3 ( STO) single crystal substrates by pulsed laser deposition under different processing conditions. Structural characterization ( i.e., XRD and TEM) confirms the epitaxial growth of STO/SRO/MnBNBT heterostructures. Through the judicious control of deposition temperature, the defect level within the films can be finely tuned. The MnBNBT thin film deposited at the optimized temperature exhibits superior ferroelectric and piezoelectric responses with remanent polarization P-r of 33.0 mu C/cm(2) and piezoelectric coefficient d(33) of 120.0 +/- 20 pm/V.
引用
收藏
页码：2347 / 2353
页数：7
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